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FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00003-1v0-E
Memory FRAM
1 M Bit (128 K × 8)
MB85R1001A
■ DESCRIPTIONS
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072
words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
process technologies.
The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001A can be used for 10 10 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E 2 PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
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Bit configuration
Read/write endurance
Operating power supply voltage
Operating temperature range
Data retention
Package
: 131,072 words × 8 bits
: 10 10 times
: 3.0 V to 3.6 V
: ? 40 ° C to + 85 ° C
: 10 years ( + 55 ° C)
: 48-pin plastic TSOP (1)
Copyright?2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
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MB85R1002ANC-GE1 功能描述:IC FRAM 1MBIT 150NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6